Energy gap and transition temperature of highly disordered and amorphous thallium- and indium-films
Identifieur interne : 000A41 ( Main/Exploration ); précédent : 000A40; suivant : 000A42Energy gap and transition temperature of highly disordered and amorphous thallium- and indium-films
Auteurs : RBID : ISTEX:218_1974_Article_BF01677942.pdfAbstract
Thin and pure Tl-films and In-films with different impurities (Ag, Te, Ge, Sb) are condensed onto a cooled substrate at 4 K. Measurements of the energy gap by means of the tunnel effect and the transition temperature of the weak-coupling superconductor thallium are carried out as a function of the degree of disorder of the films. The ratioα=2Δ0/kTc increases proportional to the reciprocal mean free path from 3.5 for the annealed film up to 3.8 for the highly disordered film. For In-films condensed by quenching with impurity additions, one finds a linear relation between energy gap and transition temperature. In-films with Sb-additive are obtained in an amorphous phase with a ratioα=2Δ0/kTc of 4.4. The amorphous state of the In/Sb-films is confirmed by measurements of the electric conductivity and the Hall-effect.
DOI: 10.1007/BF01677942
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Physikalisches Institut der Rheinisch-Westfälischen Technischen Hochschule, Aachen</wicri:regionArea><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation></author><author><name>G. Bergmann</name><affiliation wicri:level="1"><mods:affiliation>Institut für Festkörperforschung der Kernforschungsanlage Jülich, Jülich, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Festkörperforschung der Kernforschungsanlage Jülich, Jülich</wicri:regionArea><wicri:noRegion>Jülich</wicri:noRegion><wicri:noRegion>Jülich</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:218_1974_Article_BF01677942.pdf</idno><date when="1974">1974</date><idno type="doi">10.1007/BF01677942</idno><idno type="wicri:Area/Main/Corpus">000368</idno><idno type="wicri:Area/Main/Curation">000368</idno><idno type="wicri:Area/Main/Exploration">000A41</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Thin and pure Tl-films and In-films with different impurities (Ag, Te, Ge, Sb) are condensed onto a cooled substrate at 4 K. Measurements of the energy gap by means of the tunnel effect and the transition temperature of the weak-coupling superconductor thallium are carried out as a function of the degree of disorder of the films. The ratioα=2Δ0/kTc increases proportional to the reciprocal mean free path from 3.5 for the annealed film up to 3.8 for the highly disordered film. For In-films condensed by quenching with impurity additions, one finds a linear relation between energy gap and transition temperature. In-films with Sb-additive are obtained in an amorphous phase with a ratioα=2Δ0/kTc of 4.4. The amorphous state of the In/Sb-films is confirmed by measurements of the electric conductivity and the Hall-effect.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="3e730d53d82d8f19979d2ade6b379652aceec816"><titleInfo lang="eng"><title>Energy gap and transition temperature of highly disordered and amorphous thallium- and indium-films</title></titleInfo><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Comberg</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>2. Physikalisches Institut der Rheinisch-Westfälischen Technischen Hochschule, Aachen, Germany</affiliation></name><name type="personal"><namePart type="given">S.</namePart><namePart type="family">Ewert</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>2. Physikalisches Institut der Rheinisch-Westfälischen Technischen Hochschule, Aachen, Germany</affiliation></name><name type="personal"><namePart type="given">G.</namePart><namePart type="family">Bergmann</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Festkörperforschung der Kernforschungsanlage Jülich, Jülich, Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1974-07-25</dateCreated><dateValid encoding="w3cdtf">2005-04-26</dateValid><copyrightDate encoding="w3cdtf">1974</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Thin and pure Tl-films and In-films with different impurities (Ag, Te, Ge, Sb) are condensed onto a cooled substrate at 4 K. Measurements of the energy gap by means of the tunnel effect and the transition temperature of the weak-coupling superconductor thallium are carried out as a function of the degree of disorder of the films. The ratioα=2Δ0/kTc increases proportional to the reciprocal mean free path from 3.5 for the annealed film up to 3.8 for the highly disordered film. For In-films condensed by quenching with impurity additions, one finds a linear relation between energy gap and transition temperature. In-films with Sb-additive are obtained in an amorphous phase with a ratioα=2Δ0/kTc of 4.4. The amorphous state of the In/Sb-films is confirmed by measurements of the electric conductivity and the Hall-effect.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>Z. Physik</title></titleInfo><titleInfo><title>Zeitschrift für Physik</title><partNumber>Year: 1974</partNumber><partNumber>Volume: 271</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1974-09-01</dateIssued><copyrightDate encoding="w3cdtf">1974</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Elementary Particles and Nuclei</topic><topic>Nuclear Physics, Heavy Ions, Hadrons</topic><topic>Nuclear Fusion</topic></subject><identifier type="issn">0044-3328</identifier><identifier type="matrixNumber">218</identifier><identifier type="local">IssueArticleCount: 21</identifier><recordInfo><recordOrigin>Springer-Verlag, 1974</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF01677942</identifier><identifier type="matrixNumber">Art19</identifier><identifier type="local">BF01677942</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>317</start><end>321</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1974</recordOrigin><recordIdentifier>218_1974_Article_BF01677942.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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